A Material Framework for Beyond-CMOS Devices

被引：4

作者：

Galatsis, Kos ^{[1
]}

Ahn, Charles ^{[2
]}

Krivorotov, Ilya ^{[3
]}

Kim, Philip ^{[4
]}

Lake, Roger ^{[5
]}

Wang, Kang L. ^{[6
]}

Chang, Jane P. ^{[7
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Yale Univ, Dept Appl Sci, New Haven, CT 06520 USA

[3] Univ Calif Irvine, Astron Sch Phys Sci, Dept Phys, Irvine, CA 92697 USA

[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[5] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA

[6] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[7] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS | 2015年 / 1卷

关键词：

Beyond CMOS; nanodevices; nanoelectronics; nanomaterials;

D O I：

10.1109/JXCDC.2015.2424832

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Beyond-CMOS devices concepts are greatly dependent on new functional materials to provide inspiration and innovation beyond the silicon status quo. Here, we propose a material framework specifically for beyond-CMOS devices. In doing so, material system examples and data points presented are taken from the Center on Functional Accelerated Nanomaterials Engineering, the STARnet Center of Excellence.

引用

页码：19 / 27

页数：9

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