INVESTIGATION OF MOSI2 AS AN INTERCONNECT CONDUCTOR FOR MOS DEVICES

被引：1
|
作者：
DENISON, DR
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期
关键词：
D O I：
10.1116/1.569937
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：320 / 320
页数：1
相关论文
共 50 条
  • [1] NEW GATE MATERIAL FOR MOS DEVICES, MOLYBDENUM-SILICIDE (MOSI2)
    MOCHIZUKI, T
    SHIBATA, K
    INOUE, T
    OHUCHI, K
    KASHIWAGI, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C306 - C307
  • [2] Effects of MoSi2 Nanocrystals in nonvolatile memory Devices
    Lin, Jian-Yang
    Chen, Sheng-Chi
    [J]. 2013 IEEE 8TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC), 2013, : 9 - 12
  • [3] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL
    MOCHIZUKI, T
    SHIBATA, K
    INOUE, T
    OHUCHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42
  • [4] Creep behavior of MoSi2 and MoSi2 + SiC composite
    P. Hvizdoš
    J. Dusza
    W. Steinkellner
    K. Kromp
    [J]. Journal of Materials Science, 2004, 39 : 4073 - 4077
  • [5] MECHANICAL-BEHAVIOR OF MOSI2 AND MOSI2 COMPOSITES
    PETROVIC, JJ
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1995, 192 : 31 - 37
  • [6] Fabrication and characterization of TiCw/MoSi2 and SiCw/MoSi2 composites
    Sun, L
    Pan, HS
    [J]. MATERIALS LETTERS, 2002, 52 (03) : 223 - 228
  • [7] Orthogonal experiment investigation on wear resistance of MoSi2
    CHEN Ping
    [J]. Rare Metals, 2003, (03) : 230 - 234
  • [8] Investigation on laser cladding of MoSi2 powder on steel
    Laiqi Zhang1)
    [J]. International Journal of Minerals,Metallurgy and Materials, 2005, (05) : 54 - 57
  • [9] Orthogonal experiment investigation on wear resistance Of MoSi2
    Chen, P
    Tang, GN
    Zhang, H
    Liu, HC
    [J]. RARE METALS, 2003, 22 (03) : 230 - 234
  • [10] Fabrication and characterization of TiCw/MoSi2 and SiCw/MoSi2 composites
    Sun, L
    Pan, JS
    [J]. MATERIALS LETTERS, 2002, 53 (1-2) : 63 - 67
12345