HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON

被引：7
|
作者：
LAIH, LH
TSAY, WC
CHEN, YA
JEN, TS
YUANG, RH
HONG, JW
机构：
[1] Department of Electrical Engineering, National Central University, Chung-Li
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 24期
关键词：
METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODETECTORS; AMORPHOUS SEMICONDUCTORS;
D O I：
10.1049/el:19951417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10V, this a-Si:H MSM-PD had a rise time of 25ps and an FWHM of 55ps for temporal response, a dark current density of 690fA/mu m(2), a responsivity of 0.7 A/W and a spectral response peaking at 700nm.
引用
收藏
页码：2123 / 2124
页数：2
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