VAPOUR PHASE EPITAXIAL GROWTH OF N-TYPE GAS ON P-TYPE GAS

被引：1
|
作者：
LIETH, RMA
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 8卷 / 01期
关键词：
D O I：
10.1002/pssa.2210080136
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K3 / &
相关论文
共 50 条
  • [1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF N-TYPE AND P-TYPE INP
    MILLER, BI
    MCFEE, JH
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 446 - 446
  • [2] EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001)
    CHAMBERS, SA
    IRWIN, TJ
    PHYSICAL REVIEW B, 1988, 38 (11): : 7484 - 7492
  • [3] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GAAS PREPARED FROM P-TYPE GAAS
    GORELENOK, AT
    NASLEDOV, DN
    NEGRESKU.V
    TSARENKO.BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 551 - +
  • [4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-TYPE AND N-TYPE ZNSE HOMOEPITAXIAL LAYERS
    OHKAWA, K
    UENO, A
    MITSUYU, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 375 - 384
  • [5] ZnSe p-type and n-type epitaxial growth by the TDM-CVP using Se solvent
    Sakurai, F
    Suto, K
    Nishizawa, J
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 348 - 351
  • [6] N-type and P-type SnOx thin films based MOX gas sensor testing
    Sidi Mohammed Merah
    Yamna Bakha
    Abdelkader Djelloul
    Journal of Materials Science: Materials in Electronics, 2024, 35
  • [7] Fabrication of gas sensor based on p-type ZnO nanoparticles and n-type ZnO nanowires
    Hsu, Cheng-Liang
    Chen, Kuan-Chao
    Tsai, Tsung-Ying
    Hsueh, Ting-Jen
    SENSORS AND ACTUATORS B-CHEMICAL, 2013, 182 : 190 - 196
  • [8] N-type and P-type SnOx thin films based MOX gas sensor testing
    Merah, Sidi Mohammed
    Bakha, Yamna
    Djelloul, Abdelkader
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (03)
  • [9] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
    KLEIN, DL
    KOLB, GA
    POMPLIANO, LA
    SULLIVAN, MV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
  • [10] Liquid phase epitaxial p-type ZnSe growth from a Se solution and fabrication of pn junctions with diffused n-type layers
    Sakurai, F
    Motozawa, M
    Suto, K
    Nishizawa, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 172 (1-2) : 75 - 82
12345