SINGLE-ELECTRON CHARGING OF A SUPERCONDUCTING ISLAND

被引：166
|
作者：
AVERIN, DV [1 ]
NAZAROV, YV [1 ]
机构：
[1] MV LOMONOSOV STATE UNIV,INST NUCL PHYS,MOSCOW 119899,USSR
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 13期
关键词：
D O I：
10.1103/PhysRevLett.69.1993
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have calculated the quasiparticle current through a superconducting island in the Coulomb blockade regime. The current depends strongly on the parity of the total number of free electrons in the island. This dependence reflects the difference between ground-state properties of the superconductor with even and with odd number of electrons.
引用
收藏
页码：1993 / 1996
页数：4
相关论文
共 50 条
  • [1] COMBINED JOSEPHSON AND CHARGING BEHAVIOR OF THE SUPERCURRENT IN THE SUPERCONDUCTING SINGLE-ELECTRON TRANSISTOR
    EILES, TM
    MARTINIS, JM
    PHYSICAL REVIEW B, 1994, 50 (01): : 627 - 630
  • [2] Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads
    Mizugaki, Yoshinao
    Takiguchi, Masashi
    Tamura, Nobuyuki
    Shimada, Hiroshi
    28TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT28), 2018, 969
  • [3] Magnetoresistance in a superconducting single-electron transistor with a multiply connected Coulomb island
    Sato, H
    Kimura, M
    Katsumoto, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4022 - 4024
  • [4] Microscopic observations of single-electron island in Si single-electron transistors
    Nagase, M. (nagase@aecl.ntt.co.jp), 1600, Japan Society of Applied Physics (42):
  • [5] Microscopic observations of single-electron island in Si single-electron transistors
    Nagase, M
    Horiguchi, S
    Fujiwara, A
    Takahashi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2438 - 2443
  • [6] Parity effect in a superconducting single-electron transistor with a 20-nm island
    Nakamura, Y
    Chen, CD
    Tsai, JS
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 3339 - 3344
  • [7] PHOTON-ACTIVATED SWITCH BEHAVIOR IN THE SINGLE-ELECTRON TRANSISTOR WITH A SUPERCONDUCTING ISLAND
    HERGENROTHER, JM
    LU, JG
    TUOMINEN, MT
    RALPH, DC
    TINKHAM, M
    PHYSICAL REVIEW B, 1995, 51 (14): : 9407 - 9410
  • [8] Property of supercurrent flowing through superconducting single-electron transistors with weak charging effect
    Okamoto, H
    Shimizu, K
    Okuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1B): : L108 - L110
  • [9] Property of supercurrent flowing through superconducting single-electron transistors with weak charging effect
    Tokyo Inst of Technology, Tokyo, Japan
    Jpn J Appl Phys Part 2 Letter, 1 B (L108-L110):
  • [10] Thermopower of a superconducting single-electron transistor
    Turek, M
    Siewert, J
    Richter, K
    PHYSICAL REVIEW B, 2005, 71 (22):
12345