INTERMODULATION DISTORTION CHARACTERISTICS OF A SEMICONDUCTOR-LASER AMPLIFIER IN SUBCARRIER MULTIPLEXING

被引：0

作者：

LEE, SU ^{[1
]}

SHIN, SY ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,TAEJON,SOUTH KOREA

来源：

OPTICS COMMUNICATIONS | 1992年 / 90卷 / 4-6期

关键词：

D O I：

10.1016/0030-4018(92)90271-R

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The intermodulation distortion (IMD) characteristics of a subcarrier multiplexed signal in semiconductor laser amplifiers have been calculated. The minimum value of the carrier to the second-order IMD with detuning decreases 3 dB for the amplifier under consideration when the facet reflectivity changes from 10(-4) to 10(-3). In the case of third-order IMD the minimum value of the carrier to IMD ratio with detuning decreases 10 dB for the same change of reflectivity.

引用

页码：255 / 258

页数：4

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