Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

被引：8
|
作者：
Clendennen, Casey [1 ]
Mori, Nobuya [1 ,3 ]
Tsuchiya, Hideaki [2 ,3 ]
机构：
[1] Osaka Univ, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan
[2] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
[3] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan
来源：
JOURNAL OF ADVANCED SIMULATION IN SCIENCE AND ENGINEERING | 2015年 / 2卷 / 01期
关键词：
graphene; silicene; germanene; nanoribbon; FET; NEGF;
D O I：
10.15748/jasse.2.171
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ballistic performance of graphene, silicene, and germanene-nanoribbon field-effect transistors (FETs) with a gate-length of 10 nm has been numerically investigated. The graphene-nanoribbon FET is found to have the largest ON-current when one compare FETs with a nanoribbon channel having a nearly equal band-gap E-g approximate to 0.5 eV. The graphene device exhibits the largest OFF-current due to the smallest effective-mass enhancing the source-drain direct tunneling.
引用
收藏
页码：171 / 177
页数：7
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