INVERSION DOMAIN BOUNDARIES IN ALUMINUM NITRIDE

被引:60
|
作者
WESTWOOD, AD
NOTIS, MR
机构
[1] Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania
关键词
ALUMINUM NITRIDE; DOMAINS; MICROSTRUCTURE; DEFECTS; OXYGEN;
D O I
10.1111/j.1151-2916.1991.tb04091.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Inversion domain boundaries (IDBs) have been identified in undoped, hot-pressed AIN. The microstructure and microchemistry of the IDBs have been studied using conventional transmission electron microscopy, convergent-beam electron diffraction, and analytical electron microscopy. Two distinct IDB morphologies are present: a planar variant which lies on the basal plane (0001), and a curved variant which does not possess a particular habit plane, but portions of the boundary are often seen lying on one of the {1011} planes. The boundaries exhibit alpha-like fringe contrast, indicating that a translation exists across the boundary. The displacement vectors R(F) for the planar and curved boundaries have been investigated using both two-beam and multiple-beam techniques. Microchemical analysis has revealed oxygen segregation to the planar IDB; when present on the curved IDB, oxygen is at a lower concentration than in the planar case. Lattice fringe imaging and long-exposure selected area electron diffraction patterns have indicated the presence of thin, platelike precipitates at the planar IDBs. Sintering and annealing studies indicate that oxygen is necessary for the formation of the planar IDBs and that oxygen is not uniformly distributed along the curved IDBs.
引用
收藏
页码:1226 / 1239
页数:14
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