共 50 条
- [2] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514
- [3] THE VIRIAL COEFFICIENTS OF HELIUM FROM 20-DEGREES-K TO 300-DEGREES-K [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (11): : 1607 - 1612
- [5] SPECIFIC HEATS OF LITHIUM ISOTOPES FROM 20-DEGREES-K TO 300-DEGREES-K [J]. PHYSICA, 1959, 25 (11): : 1193 - 1199
- [6] INVESTIGATION OF THE 300-DEGREES-K ANNEALING STAGE OF GERMANIUM IRRADIATED WITH FAST ELECTRONS AT 77-DEGREES-K [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 878 - 880
- [7] MAGNETIC PROPERTIES OF OXIDES OF MANGANESE AT TEMPERATURES FROM 20-DEGREES-K TO 300-DEGREES-K [J]. SOVIET PHYSICS JETP-USSR, 1957, 5 (05): : 1023 - 1024
- [8] NERNST AND ETTINGSHAUSEN EFFECTS IN SILICON BETWEEN 300-DEGREES-K AND 800-DEGREES-K [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1491 - 1493
- [9] SIMPLE APPARATUS FOR MAINTAINING TEMPERATURES BETWEEN 77-DEGREES-K AND 300-DEGREES-K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (10): : 836 - 837
- [10] GASEOUS DATA OF STATE FOR HYDROGEN BETWEEN 1 AND 200 ATMOS FROM 20-DEGREES-K TO 300-DEGREES-K [J]. PHYSICAL REVIEW, 1950, 79 (01): : 235 - 235