TIME-DEPENDENCE OF RECOMBINATION-ENHANCED IMPURITY DIFFUSION IN GAAS

被引：11
|
作者：
UEMATSU, M
WADA, K
机构：
[1] NTT LSI Laboratories, Atsugi-Shi, Kanagawa 243-01
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期
关键词：
D O I：
10.1063/1.107217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time dependence of recombination-enhanced impurity diffusion (REID) has been investigated. The decrease in the peak current density of tunnel diodes was simulated based on the analysis in terms of the kinetics of the decay of the recombination center. The present results suggest that in the REID the energy released on minority-carrier injection at the recombination center enhances the annihilation of the recombination center, in which a group III point defect that enhances the Be diffusion is emitted.
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页码：1612 / 1614
页数：3
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