OPTICAL SPECTROSCOPY OF SEMICONDUCTOR SURFACES

被引：6
|
作者：
DELSOLE, R
机构：
[1] Dipartimento di Fisica, II Università di Roma Tor Vergat, I-00173 Roma, Via O. Raimondo
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期
关键词：
Semiconductor Materials;
D O I：
10.1016/0921-5107(90)90051-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The use of optical spectroscopy for the investigation of semiconductor surfaces is reviewed. Its sensitivity to the spectrum of surface states and/or to surface atomic structure is discussed. A comparison between theory and experiment is carried out for Si(111)2×1, Si(110), GaP(110) and GaAs(110). © 1990.
引用
收藏
页码：177 / 182
页数：6
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