SELF-ALIGNED SILICON-STRIP FIELD EMITTER ARRAY

We have fabricated vacuum field emission devices based on large arrays of silicon-strip cathodes. The emitter tip radii range from 20 to 25 nm. The self-aligned gate is typically located less than 550 nm from the emitter tip. The collector aperture is 2.45-mu-m wide and is located 700 nm above the gate. Arrays of thirteen strip emitters, 300-mu-m and 600-mu-m long, have been fabricated. Array elements have been modeled and electron trajectories and transit times simulated.