MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN CDTE-CDMNTE QUANTUM-WELLS AND THEIR CHARACTERIZATION

被引：33
|
作者：
WAAG, A [1 ]
SCHMEUSSER, S [1 ]
BICKNELLTASSIUS, RN [1 ]
YAKOVLEV, DR [1 ]
OSSAU, W [1 ]
LANDWEHR, G [1 ]
URALTSEV, IN [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD 194021,USSR
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期
关键词：
D O I：
10.1063/1.105822
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth and optical characterization of CdTe/CdMnTe single quantum wells with well thicknesses ranging from 60 down to 6 angstrom. The single quantum wells were grown by standard molecular beam epitaxy without growth interruption and investigated by reflection, photoluminescence (PL), and excitation PL. All structures including the 6-angstrom-thick quantum well exhibit extraordinarily narrow photoluminescence lines. From an analysis of linewidth and Stokes shift of the photoluminescence lines informations on the structure of the CdTe/CdMnTe interfaces are derived. The good quality of those structures made it possible to identify for the first time recombination of two-dimensional free exciton magnetic polarons.
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收藏
页码：2995 / 2997
页数：3
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