The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors

被引：2
|
作者：
Liu, ST [1 ]
Jenkins, WC [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/23.489262
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The radiation induced front channel threshold voltage shift (Delta V-t1) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (V-DD) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V-DD is not fully realized due to 1) a radiation induced off-set voltage at V-DD = 0 V, and 2) enhanced coupling of the buried oxide charge to the front channel.
引用
收藏
页码：2122 / 2126
页数：5
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