BAND OFFSETS AND OPTICAL BOWINGS OF CHALCOPYRITES AND ZN-BASED II-VI ALLOYS

被引:450
|
作者
WEI, SH
ZUNGER, A
机构
[1] National Renewable Energy Laboratory, Golden
关键词
D O I
10.1063/1.359901
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using first-principles band-structure theory we have systematically calculated the (i) alloy bowing coefficients, (ii) alloy mixing enthalpies, and (iii) interfacial valence- and conduction-band offsets for three mixed-anion (CuInX(2), X = S, Se, Te) and three mixed-cation (CuMSe(2), M = Al, Ga, In) chalcopyrite systems. The random chalcopyrite alloys are represented by special quasirandom structures (SQS). The calculated bowing coefficients are in good agreement with the most recent experimental data for stoichiometric alloys. Results for the mixing enthalpies acid the band offsets are provided as predictions to be tested experimentally. Comparing our calculated bowing and band offsets for the mixed-anion chalcopyrite alloys with those of the corresponding Zn chalcogenide alloys (ZnX, X = S, Se, Te), we find that the larger p-d coupling in chalcopyrite alloys reduces their band offsets and optical bowing. Bowing parameters for ordered, Zn-based II-VI alloys in the CuAu, CuPt, and chalcopyrite structures are presented: we find that ordered Zn2SeTe has bowing coefficients of 1.44 and 3.15 eV in the CuAu and CuPt structures, while the random ZnSexTe1-x alloy has a bowing of 1.14 eV. The band alignment between CuInSe2 and CuInSe2-derived ordered vacancy compounds are also presented. (C) 1995 American Institute of Physics.
引用
收藏
页码:3846 / 3856
页数:11
相关论文
共 50 条
  • [1] Calculation of electronic and optical properties of Zn-based II-VI semiconductors
    Bechiri, A.
    Benmakhlouf, F.
    Bouarissa, N.
    PROCEEDINGS OF THE JMSM 2008 CONFERENCE, 2009, 2 (03): : 803 - 812
  • [2] Photoelectron spectroscopy of chalcopyrites and Zn based II-VI semiconductor heterostructures
    Worz, M
    Pschorr-Schoberer, E
    Flierl, R
    Preis, H
    Gebhardt, W
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2871 - 2875
  • [3] Modelling of band offsets in II-VI heterostructures
    Ünlü, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (01): : 581 - 585
  • [4] Structural and Optical Properties of Zn-Based II-VI Semiconductor Thin Films Deposited by MOCVD
    Kim, Yongshin
    Yeon, Jeongmi
    Lee, Sang-Kwon
    Choi, In-Hwan
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2015, 10 (03) : 408 - 412
  • [5] ZnO nanorod synthesis from Zn-based II-VI semiconductors
    Choy, W. C. H.
    Guo, C. F.
    Pang, K. H.
    Leung, Y. P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (06): : 1376 - 1382
  • [6] CALCULATION OF BAND OFFSETS IN STRAINED II-VI HETEROJUNCTIONS
    BERTHO, D
    SIMON, A
    BOIRON, D
    JOUANIN, C
    PRIESTER, C
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 372 - 375
  • [7] Energetics of N-related defects in Zn-based II-VI semiconductors
    Cheong, BH
    Chang, KJ
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1209 - 1212
  • [8] Pressure-dependent dynamical properties of Zn-based II-VI semiconductors
    Saib, S.
    Khan, M. Ajmal
    Bouarissa, N.
    PHYSICA B-CONDENSED MATTER, 2012, 407 (17) : 3570 - 3574
  • [9] Transitivity of the band offsets in II-VI/III-V heterojunctions
    Rubini, S
    Milocco, E
    Sorba, L
    Franciosi, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 178 - 182
  • [10] ELECTRONIC-STRUCTURES AND BAND OFFSETS OF II-VI STRAINED SUPERLATTICES
    NAKAYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 725 - 727