LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF INASSB GROWN ON GASB SUBSTRATES FROM ANTIMONY SOLUTION

被引：16

作者：

MAO, Y

KRIER, A

机构：

[1] Applied Physics Division, School of Physics and Materials, Lancaster University, Lancaster

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 133卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90110-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The epitaxial growth of lattice-matched InAsSb onto GaSb substrates from Sb solution by liquid phase epitaxy (LPE) has been investigated. Smooth, mirror-like, epitaxial layers of uniform thickness were obtained under close lattice matching conditions with no evidence of substrate erosion. Photoluminescence emission was observed from the material at room temperature in the wavelength region near 4.2 mum, which is of interest for the fabrication of optoelectronic components for use in infrared CO2 sensors.

引用

下载

页码：108 / 116

页数：9

共 50 条

[1] Photoluminescence studies of epitaxial InAsSb and InAsSb:Be grown on GaSb substrates
Marciniak, MA
Hengehold, RL
Yeo, YK
Turner, GW
Prairie, MW
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 865 - 868
[2] LIQUID-PHASE EPITAXIAL-GROWTH OF ALGAASSB ON GASB
LAZZARI, JL
LECLERCQ, JL
GRUNBERG, P
JOULLIE, A
LAMBERT, B
BARBUSSE, D
FOURCADE, R
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 465 - 478
[3] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ALGAASSB LATTICE-MATCHED TO GASB SUBSTRATES
MOTOSUGI, G
KAGAWA, T
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 102 - 108
[4] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP ON GROOVED SUBSTRATES
USHIJIMA, I
TANAHASHI, T
NISHITANI, Y
UMEBU, I
AKITA, K
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 161 - 164
[5] LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON GASB
GERTNER, ER
ANDREWS, AM
BUBULAC, LO
CHEUNG, DT
LUDOWISE, MJ
RIEDEL, RA
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) : 545 - 554
[6] THE INFLUENCE OF SUPERCOOLING ON THE LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON (100) GASB SUBSTRATES
MANI, H
JOULLIE, A
BHAN, J
SCHILLER, C
PRIMOT, J
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : 289 - 294
[7] QUASI-GROWN LAYERS IN LIQUID-PHASE EPITAXIAL-GROWTH
TAKEDA, Y
IMAMURA, Y
SASAKI, A
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) : 75 - 78
[8] GROWTH AND PHOTOLUMINESCENCE OF GASB AND GA1-XINXASYSB1-Y GROWN ON GASB SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY
IYER, S
HEGDE, S
ABULFADL, A
BAJAJ, KK
MITCHEL, W
PHYSICAL REVIEW B, 1993, 47 (03): : 1329 - 1339
[9] LIQUID-PHASE EPITAXIAL-GROWTH OF GAINASSB WITH APPLICATION TO GAINASSB/GASB HETEROSTRUCTURE DIODES
WU, MC
CHEN, CC
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6116 - 6120
[10] LIQUID-PHASE EPITAXIAL-GROWTH OF ALGASB
WADA, T
KUBOTA, K
IKOMA, T
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (03) : 493 - 500

← 1 2 3 4 5 →