POTENTIAL-ENERGY SURFACES FOR INSERTION OF ZR INTO H-2

被引:5
|
作者
WANG, JZ [1 ]
DAS, KK [1 ]
BALASUBRAMANIAN, K [1 ]
机构
[1] ARIZONA STATE UNIV,DEPT PHYSIOL,TEMPE,AZ 85287
关键词
D O I
10.1080/00268979000100101
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Potential energy surfaces of twelve electronic States of ZrH2 are constructed using a complete active space self-consistent field method (CASSCF) followed by mult-reference singles + doubles configuration interaction (MRSDCI) cal- culations. The Zr(3F) ground state of zirconium atom has to surmount a barrier of llkcal/mole for insertion into H2. The excited Zr(1D) state inserts into H2 almost spontaneously. The excited Zr(5F) atom forms a weak complex with H2 and subsequently has to surmount a large barrier for insertion into H2. Three possible nearly-degenerate bent electronic States are found for ZrH2 (1A13B1 and3A1). The1Al ground state of ZrH2 was found to be 26kcal/mole more stable compared to Zr(3F) + H2. Mulliken population analyses reveal considerable Ad5s5p hybridization of the metal atom in the Zr-H bonds. The dipole moments of bent low-lying electronic States reveal that the ZrH bonds are ionic with Zr+H− polarity. The effects of ten-component 4/-type functions are also studied on the various electronic States of ZrH2. © 1990 Taylor & Francis Group, LLC.
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页码:147 / 159
页数:13
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