MOS INTEGRATED-CIRCUIT ANALYSIS PROGRAM

被引：0

作者：

TAKEYA, K ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LABS,DIV LARGE SCALE INTEGRATED MEMORY DEV,TOKYO 108,JAPAN

来源：

REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 1977年 / 25卷 / 3-4期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：224 / 230

页数：7

共 50 条

[1] MOS INTEGRATED-CIRCUIT RELIABILITY
SCHNABLE, GL
SCHLEGEL, ES
EWALD, HJ
[J]. IEEE TRANSACTIONS ON RELIABILITY, 1972, R 21 (01) : 12 - &
[2] VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY
HOLMES, FE
SALAMA, CAT
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 791 - +
[3] DSA MOS-TRANSISTOR AND ITS INTEGRATED-CIRCUIT
HAYASHI, Y
SEKIGAWA, T
TARUI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 163 - 166
[4] SHIELDED SILICON GATE COMPLEMENTARY MOS INTEGRATED-CIRCUIT
LIN, HC
HALSOR, JL
HAYES, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1199 - &
[5] PLASTIC-DEFORMATION AND MOS INTEGRATED-CIRCUIT PERFORMANCE
TASCH, AF
BUSS, DD
HUFF, HR
HARTMAN, TE
PORTER, VR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C99 - &
[6] ANALYSIS OF INTEGRATED-CIRCUIT AMPLIFIERS
LURE, OB
[J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1981, 35-6 (12) : 57 - 62
[7] MOS-BIPOLAR MONOLITHIC INTEGRATED-CIRCUIT TECHNOLOGY
POLINSKY, M
GRAF, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 239 - 244
[8] A MONOLITHIC LEAD SULFIDE SILICON MOS INTEGRATED-CIRCUIT STRUCTURE
JHABVALA, MD
BARRETT, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1900 - 1905
[9] SILICON-ON-INSULATOR MOS DEVICES FOR INTEGRATED-CIRCUIT APPLICATIONS
COLINGE, JP
[J]. HEWLETT-PACKARD JOURNAL, 1988, 39 (01): : 87 - 93
[10] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS
MOHAMMADI, F
SARASWAT, KC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

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