FULLY ION-IMPLANTED ABRUPT PN JUNCTION ON SEMIINSULATING INP

被引：5
|
作者：
WANG, KW
CHENG, CL
ZIMA, SM
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 20期
关键词：
D O I：
10.1049/el:19870727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1040 / 1041
页数：2
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