INFLUENCE OF AN ELECTRIC-FIELD ON POSITRON IMPLANTATION PROFILE IN POLYETHYLENE

被引:0
|
作者
HEINRICH, F
机构
来源
HELVETICA PHYSICA ACTA | 1978年 / 51卷 / 04期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:433 / 439
页数:7
相关论文
共 50 条
  • [1] STUDY OF THE ELECTRIC-FIELD EFFECT IN POLYETHYLENE BY THE POSITRON-ANNIHILATION TECHNIQUE
    ELSAYED, AMA
    ABDELHADY, EE
    MOHSEN, M
    [J]. JOURNAL OF APPLIED POLYMER SCIENCE, 1993, 50 (10) : 1723 - 1726
  • [2] POSITRON DIFFUSION IN AN ELECTRIC-FIELD IN SI
    CORBEL, C
    HAUTOJARVI, P
    MAKINEN, J
    VEHANEN, A
    MATHIOT, D
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (35) : 6315 - 6319
  • [3] INFLUENCE OF ADDITIVES ON THE STABILITY OF POLYETHYLENE IN A NON-UNIFORM ELECTRIC-FIELD
    SIMUNKOVA, D
    MARCEK, O
    [J]. PLASTE UND KAUTSCHUK, 1983, 30 (01): : 18 - 20
  • [4] THEORY OF POSITRON DRIFT IN A UNIFORM ELECTRIC-FIELD
    PAUL, DAL
    TSAI, JS
    [J]. CANADIAN JOURNAL OF PHYSICS, 1979, 57 (10) : 1667 - 1671
  • [5] FREE POSITRON-ANNIHILATION IN GASES UNDER THE INFLUENCE OF A STATIC ELECTRIC-FIELD
    DAVIES, SA
    CHARLTON, M
    GRIFFITH, TC
    [J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1989, 22 (02) : 327 - 340
  • [6] EFFECT OF AN ELECTRIC-FIELD ON AN INTERFACIAL PROFILE
    RODRIQUEZ, R
    ANTONIEWICZ, PR
    [J]. CHEMICAL PHYSICS LETTERS, 1979, 66 (02) : 400 - 402
  • [7] THE INFLUENCE OF ELECTRIC-FIELD AND MOBILITY PROFILE ON GAAS-MESFET CHARACTERISTICS
    CHEN, CH
    ARCH, DK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2405 - 2414
  • [8] POSITRONS TRAPPED IN POLYETHYLENE - ELECTRIC-FIELD EFFECT
    BERTOLACCINI, M
    BISI, A
    GAMBARINI, G
    ZAPPA, L
    [J]. APPLIED PHYSICS, 1978, 17 (02): : 203 - 205
  • [9] INFLUENCE OF ELECTRIC-FIELD ON CRYSTALLIZATION
    LYCHEV, AP
    RUDENKO, YS
    CHEREMISIN, AI
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (04): : 29 - 32
  • [10] ELECTRIC FIELD DEPENDENCE OF POSITRON FORMATION IN POLYETHYLENE
    BRANDT, W
    WILKENFE.J
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (04): : 523 - &