KINETIC EFFECTS ON THE AMPHOTERIC BEHAVIOR OF GROUP-IV IMPURITIES IN THE GROWTH OF MBE AND VPE GAAS

被引：0
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作者：
LEE, B
STILLMAN, GE
机构：
[1] UNIV ILLINOIS,MAT RES LAB,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：S15 / S16
页数：2
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