ELECTRICAL-PROPERTIES OF VACUUM-DEPOSITED POLYCRYSTALLINE INSE THIN-FILMS

Hall-effect measurements carried-out on n-type InSe thin films obtained by vacuum evaporation and thermally annealed above the onset of crystallization are reported. Annealing is performed at different temperatures and for different periods of time. The temperature dependence of Hall mobility and conductivity is tentatively explained in terms of Petritz' model where the scattering mechanism is due to a potential barrier introduced by the grain boundaries. The effect of grain sizes on the mobility and the barrier height is also observed.