THE LUMPED-CHARGE POWER MOSFET MODEL, INCLUDING PARAMETER EXTRACTION

被引：36
|
作者：
BUDIHARDJO, I
LAURITZEN, PO
机构：
[1] Department of Electrical Engineering, University of Washington, Seattle
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 1995年 / 10卷 / 03期
关键词：
D O I：
10.1109/63.388005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fundamentally new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances, The model equations are derived from the charge stored on two internal nodes and the three external terminals, A straightforward parameter extraction technique uses the standard gate-charge plot or process data and is matched with interelectrode capacitance measurements. Simulations are in excellent agreement with measurements. The model is used to design a snubber for a flyback converter.
引用
收藏
页码：379 / 387
页数：9
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