PREPARATION OF NITROGEN-DOPED AND PHOSPHORUS-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS

被引：3

作者：

SWIDERSKI, I ^{[1
]}

SZCZUTOWSKI, W ^{[1
]}

NIEMYSKI, T ^{[1
]}

机构：

[1] RES CTR CRYSTALS, DEPT SEMICONDUCTOR TECHNOL, ZIELNA 37, 00-108 WARSAW, POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 03期

关键词：

D O I：

10.1016/0022-0248(74)90232-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：185 / 189

页数：5

共 50 条

[1] PREPARATION OF PURE AND BORON-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 125 - 134
[2] PREPARATION OF EPITAXIAL SILICON-CARBIDE LAYERS DOPED WITH GROUP-3 AND GROUP-5 ELEMENTS ON ALPHA-SIC CRYSTALS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (03) : 350 - 356
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[4] STRUCTURAL AND MORPHOLOGICAL PECULIARITIES OF EPITAXIAL LAYERS AND MONOCRYSTALS OF SILICON-CARBIDE HIGHLY DOPED BY NITROGEN
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[5] Nitrogen ion implantation into alpha-SiC epitaxial layers
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1628 - +
[7] OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY PHOSPHORUS-DOPED EPITAXIAL SILICON LAYERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (03) : 760 - 763
[8] CATHODOLUMINESCENCE OF SILICON-CARBIDE DOPED WITH BORON AND NITROGEN
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[10] FABRICATION AND CHARACTERIZATION OF EPITAXIAL HEAVILY PHOSPHORUS-DOPED SILICON
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