共 50 条
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- [2] ENERGY BAND STRUCTURE OF SRTIO3 BY A SELF-CONSISTENT FIELD TIGHT-BINDING CALCULATIONBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 371 - +RICHARDSON, JWKELLY, EJSOULES, TFVAUGHT, DM
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- [6] ELECTRONIC-STRUCTURE OF TRANSITION-METAL IMPURITIES AND OF SURFACE-DEFECTS IN SRTIO3NON-STOICHIOMETRIC COMPOUNDS: SURFACES, GRAIN BOUNDARIES AND STRUCTURAL DEFECTS, 1989, 276 : 173 - 186SELME, MOTOUSSAINT, GPECHEUR, P
- [7] Calculation of defects in silicon by a new tight-binding modelCHINESE PHYSICS LETTERS, 2000, 17 (03) : 215 - 217Pei, MWang, WPan, BCLi, YP
- [8] Invisible surface defects in a tight-binding latticeEUROPEAN PHYSICAL JOURNAL B, 2014, 87 (08):Longhi, Stefano
- [9] Invisible surface defects in a tight-binding latticeThe European Physical Journal B, 2014, 87Stefano Longhi
- [10] Tight-binding calculation studies of vacancy and adatom defects in grapheneJOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (11)Zhang, WeiLu, Wen-CaiZhang, Hong-XingHo, K. M.Wang, C. Z.