APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

被引：108
|
作者：
ASPNES, DE
QUINN, WE
GREGORY, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期
关键词：
D O I：
10.1063/1.102868
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first use of ellipsometry as a real-time monitor of III-V semiconductor crystal growth by molecular beam epitaxy, specifically growth of GaAs and AlGaAs from arsine, triethylgallium, and triethylaluminum sources. Our results provide new insight into the oxide desorption process and show a sensitivity of ±0.03 in compositions x>0.2 for 10 Å thickness increments of AlxGa1-xAs during initial deposition on GaAs.
引用
收藏
页码：2569 / 2571
页数：3
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