DEEP CENTER PHOTOLUMINESCENCE STUDY OF LOW-TEMPERATURE INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

YU, PW ^{[1
]}

LIANG, BW ^{[1
]}

TU, CW ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature grown (130-480-degrees-C) InP was investigated using photoluminescence spectroscopy with changes of excitation intensity and temperature. Two deep broad photoluminescence bands at approximately 0.8 and 1.06 eV are present in undoped and Be-doped materials, and their formation strongly depends on the growth temperature. P(In) and V(In) related centers are associated with the transitions at 0.8 and 1.06 eV bands via the deep donor P(In)-Be acceptor pair and the conduction band-to-V(In) acceptor transitions, respectively. A configuration coordinate model is used to locate the deep donor and acceptor levels.

引用

页码：2443 / 2445

页数：3

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