THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN

被引:0
|
作者
KLEIJN, CR
机构
来源
JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C2期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and at the microscopic (feature-scale) level. Examples of modeling results for single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen are presented and comparisons are made with experimental results. The use of mathematical models in the design and optimization of single-wafer LPCVD reactors and processes is discussed.
引用
收藏
页码:19 / 31
页数:13
相关论文
共 50 条