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- [2] INFRARED-ABSORPTION SPECTRA OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 586 - 587
- [3] PIEZORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 110 - 112
- [4] INVESTIGATION OF FARADAY-EFFECT IN N-TYPE GALLIUM-PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 54 - 57
- [5] OPTICAL RECTIFICATION AND PHOTON DRAG IN N-TYPE GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (06): : 905 - 916
- [7] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 633 - 644
- [9] INVESTIGATION OF ABSORPTION IN PARA-TYPE GALLIUM-PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1110 - 1113
- [10] KINETICS OF THE LUMINESCENCE EMITTED FROM NITROGEN-DOPED N-TYPE GALLIUM-PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 170 - 172