BONDING AND COMPOSITION DIAGRAMS FOR SPUTTERED A-SI-H

被引：3

|

作者：

PAWLEWICZ, WT

MARTIN, PM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 02期

关键词：

D O I：

10.1016/0038-1098(81)90685-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：337 / 339

页数：3

相关论文

共 50 条

[1] H-CONTENT AND BONDING IN TRIODE SPUTTERED A-SI-H
MARTIN, PM
PAWLEWICZ, WT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C401 - C401
[2] INFLUENCE OF DEPOSITION CONDITIONS ON THE HYDROGEN COMPOSITION OF SPUTTERED A-SI-H ALLOYS
MARTIN, PM
PAWLEWICZ, WT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C99 - C99
[3] TRANSPORT IN DOPED SPUTTERED A-SI-H
ANDERSON, DA
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 249 - 249
[4] CARRIER PROPAGATION IN SPUTTERED A-SI-H
KIRBY, PB
PAUL, W
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5373 - 5383
[5] FAST NONRADIATIVE RECOMBINATION IN SPUTTERED A-SI-H
COLLINS, RW
VIKTOROVITCH, P
WEISFIELD, RL
PAUL, W
[J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6643 - 6648
[6] THE ROLE OF SUBSTRATE-TEMPERATURE AND IN-CHAMBER ANNEALING IN H-SI BONDING CONFIGURATIONS IN SPUTTERED A-SI-H
RUTHER, R
LIVINGSTONE, J
[J]. THIN SOLID FILMS, 1993, 226 (01) : 59 - 64
[7] ELECTROPHOTOGRAPHIC PROPERTIES OF REACTIVELY SPUTTERED A-SI-H
SENSKE, W
MARSCHALL, N
HERKERT, R
GREEB, KH
FRANK, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1239 - 1242
[8] LUMINESCENCE RECOMBINATION IN DOPED MAGNETRON SPUTTERED A-SI-H
RHODES, AJ
BHAT, PK
SEARLE, TM
AUSTIN, IG
ALLISON, J
[J]. JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 457 - 459
[9] INTERFACE DEFECTS IN SPUTTERED A-SI-H/A-C-H MULTILAYERS
HE, DY
ZHANG, FQ
CUI, JZ
CHEN, GH
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 142 (01): : K35 - K37
[10] TRAP PARAMETERS IN UNDOPED SPUTTERED A-SI-H FROM TSC
HAMDI, H
DENEUVILLE, A
BUSTARRET, E
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 683 - 686

← 1 2 3 4 5 →