共 50 条
- [1] NEGATIVE MAGNETORESISTANCE IN COMPENSATED GALLIUM-ARSENIDE AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1668 - 1673
- [2] MAGNETORESISTANCE AND MAGNETOTHERMOELECTRIC POWER OF COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 984 - 986
- [3] NATURE OF NEGATIVE MAGNETORESISTANCE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1714 - 1717
- [4] INFLUENCE OF ELECTRON-GAS HEATING ON NEGATIVE MAGNETORESISTANCE OF COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 330 - 331
- [5] PHOTOABSORPTION IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 686 - 688
- [6] CHARACTERISTICS OF NEGATIVE MAGNETORESISTANCE OF GALLIUM-ARSENIDE HEAVILY DOPED WITH TIN SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 380 - 381
- [7] EMISSION CURRENTS IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1217 - 1220
- [8] EFFICIENCY OF LUMINESCENCE IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (05): : 575 - 576
- [9] ACTIVATED CONDUCTION IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 131 - 133
- [10] INFLUENCE OF AN ELECTRIC-FIELD ON THE NEGATIVE MAGNETORESISTANCE OF EPITAXIAL GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 985 - 986