Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells

被引：0
|
作者：
Guo Zi-zheng [1 ,2 ]
Liang Xi-xia [1 ]
Ban Shi-liang [1 ]
机构：
[1] Inner Mongolia Univ, Dept Phys, Hohhot 010021, Peoples R China
[2] Inner Mongolia Normal Univ, Dept Phys, Hohhot 010022, Peoples R China
来源：
OPTOELECTRONICS LETTERS | 2005年 / 1卷 / 03期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1007/BF03033832
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnCdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.
引用
收藏
页码：164 / 167
页数：4
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