ON THE COMPOSITIONAL DEPENDENCE OF THE OPTICAL GAP AND STRUCTURAL-PROPERTIES OF AMORPHOUS INXSE1-X THIN-FILMS

被引：1
|
作者：
BISWAS, SK
CHAUDHURI, S
CHOUDHURY, A
机构：
[1] Department of Physics, University of Kalyani, Kalyani, Nadia, 741 235, West Benga
[2] Department of Physics, Jadavpur University, Calcutta
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 03期
关键词：
D O I：
10.1007/BF00696295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optical gap of the amorphous InxSe1-x thin film has been observed to decrease with increasing content of indium in the film (x). An attempt is made to interpret the compositional dependence of the optical gap in amorphous InxSe1-x thin film in an alloy-like approach. It has been found that introduction of higher concentrations of indium imparts greater stability to the structure of the indium selenium alloy. From the study of the radial distribution function (RDF) by X-rays it is observed that there is a correlation between the coordination number and the optical gap of indium selenide thin films.
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页码：174 / 176
页数：3
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