SPECIAL ISSUE ON MEMORY AND LOGIC - FOREWORD

被引：0

|

作者：

OCONNOR, KJ ^{[1
]}

GUDGER, KH ^{[1
]}

机构：

[1] AT&T BELL LABS,DEPT MEMORY DESIGN,TECH STAFF,ALLENTOWN,PA 18103

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 11期

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D O I：

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1483 / 1485

页数：3

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