RESONANT-CAVITY ENHANCED INP/INGAAS PHOTODIODE ON SI USING EPITAXIAL LIFTOFF

被引：7

作者：

SALVADOR, A ^{[1
]}

SVERDLOV, B ^{[1
]}

LEHNER, T ^{[1
]}

BOTCHKAREV, A ^{[1
]}

HUANG, F ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 15期

关键词：

D O I：

10.1063/1.112876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial liftoff (ELO) is used in the fabrication of an InP/InGaAs resonant cavity photodetector on Si. External mirrors were employed with the bottom mirror consisting of an intermediate gold layer between the Si and ELO InP film. A dielectric stack of Si/SiO2 was used as the top mirror instead of a semitransparent metallic mirror to increase the quantum efficiency further. An external quantum efficiency of 0.57 in the spectral region of 1.55 mum was obtained for a 2500-angstrom-thick InGaAs absorbing layer. This is four times larger than the predicted value for a conventional pin photodiode with the same absorbing layer thickness. The spectral response showed wavelength selectivity. A full width at half-maximum of 150 angstrom is obtained with the top mirror reflectivity matched for optimum quantum efficiency. Further increase in the top mirror reflectivity improved spectral selectivity but at the expense of reduced quantum efficiency. (C) 1994 American Institute of Physics.

引用

页码：1880 / 1882

页数：3

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