INVESTIGATION OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE GAINASSB LASERS

The temperature dependence of the threshold current density was calculated and determined experimentally for double-heterostructure lasers made of GaInAsSb solid solutions. In the range 77-310 K this temperature dependence consisted of three sections, corresponding to three mechanisms of nonequilibrium carrier recombination in the active region. At temperatures 77-200 K the dependence was J(th) is-proportional-to T3/2 and it was governed by the radiative recombination rate. At higher temperatures (200-300 K) the dependence changed to J(th) is-proportional-to T9/2 and was governed by the Auger recombination rate (CHHS process). Above room temperature the threshold current rose exponentially because of the Auger CHCC process.