OBSERVATION OF FACETS ON SILICON SURFACE FORMED BY HYDROCHLORIC ACID SELECTIVE VAPOR ETCHING

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作者：
SUGAWARA, K
NAKAZAWA, Y
SUGITA, Y
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ELECTROCHEMICAL TECHNOLOGY | 1968年 / 6卷 / 7-8期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：295 / &
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