STRUCTURAL-PROPERTIES OF ULTRATHIN ARSENIC-DOPED LAYERS IN SILICON

被引：19
|
作者：
DENHOFF, MW
JACKMAN, TE
MCCAFFREY, JP
JACKMAN, JA
LENNARD, WN
MASSOUMI, G
机构：
[1] ENERGY MINES & RESOURCES CANADA,MET TECHNOL LAB,OTTAWA K1A 0G1,ONTARIO,CANADA
[2] UNIV WESTERN ONTARIO,INTERFACE SCI WESTERN,LONDON N6A 3K7,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期
关键词：
D O I：
10.1063/1.100707
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1332 / 1334
页数：3
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