ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2

被引:120
|
作者
BENNETT, AJ
ROTH, LM
机构
关键词
D O I
10.1016/S0022-3697(71)80182-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1251 / &
相关论文
共 50 条
  • [1] Electronic structure studies of the E′δ and the triplet centers in α-SiO2
    Karna, SP
    Pineda, AC
    Shedd, WM
    Singaraju, BK
    [J]. PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 161 - 166
  • [2] ELECTRONIC-STRUCTURE OF E1' CENTERS IN SIO2
    YIP, KL
    BEALLFOWLER, W
    [J]. PHYSICAL REVIEW B, 1975, 11 (06): : 2327 - 2338
  • [3] SIO2 SURFACE DEFECT CENTERS STUDIED BY AES
    SCHWIDTAL, K
    [J]. SURFACE SCIENCE, 1978, 77 (03) : 523 - 536
  • [4] DEFECT STRUCTURE OF NONCRYSTALLINE SIO2
    REVESZ, AG
    [J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1972, 51 (04): : 367 - &
  • [5] H2 cracking at SiO2 defect centers
    Vitiello, M
    Lopez, N
    Illas, F
    Pacchioni, G
    [J]. JOURNAL OF PHYSICAL CHEMISTRY A, 2000, 104 (20): : 4674 - 4684
  • [6] Electronic structure of defect centers P1, P2, and P4 in P-doped SiO2
    Pacchioni, G
    Erbetta, D
    Ricci, D
    Fanciulli, M
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (26): : 6097 - 6102
  • [7] BULK ELECTRONIC-STRUCTURE OF SIO2
    LAUGHLIN, RB
    JOANNOPOULOS, JD
    CHADI, DJ
    [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5228 - 5237
  • [8] ELECTRONIC-STRUCTURE OF GE IN SIO2
    HAGON, JP
    JAROS, M
    STONEHAM, AM
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (25): : 4957 - 4962
  • [9] Defect band structure investigation of postbreakdown SiO2
    Xu, Mingzhen
    Tan, Changhua
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (08)
  • [10] Structure and paramagnetic properties of defect centers in Ge-doped SiO2 glass:: Localized and delocalized Ge E′ centers
    Uchino, T
    Takahashi, M
    Yoko, T
    [J]. PHYSICAL REVIEW B, 2000, 62 (23): : 15303 - 15306