CORRECTION TECHNIQUE FOR ON-CHIP MODULATION RESPONSE MEASUREMENTS OF OPTOELECTRONIC DEVICES

被引：5
|
作者：
DEBIE, P
MARTENS, L
机构：
[1] Department of Information Technology, University of Gent—IMEC
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 06期
关键词：
D O I：
10.1109/22.390181
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new and accurate error correction technique for on-chip intensity modulation response measurements of high-frequency optoelectronic devices is presented. Mathematical expressions for the different sources of errors that exist in the measurement system are derived. The new correction technique applied to the modulation response measurement of a strained quantum well laser diode shows excellent agreement with the theoretically expected result. Simulation results for a small-signal circuit model of the laser diode show excellent agreement with the measured input reflection coefficient (S11 and the modulation response S21. With the corrected modulation response measurement, more accurate parameters for this model are extracted.
引用
收藏
页码：1264 / 1269
页数：6
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