Electron and hole traps in Zn0.25Cd0.75Se mixed crystals

被引：9
|
作者：
Lewis, JE
Ture, IE
Brinkman, AW
Woods, J
机构：
[1] SUNY Coll Plattsburgh, Dept Phys, Plattsburgh, NY 12901 USA
[2] GEC Plc, Hirst Res Ctr, London, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 03期
关键词：
D O I：
10.1088/0268-1242/1/3/009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep level defects in Zn0.25Cd0.75Se mixed crystals, grown from the vapour phase, were investigated by a variety of space charge techniques. A total of five deep levels have been observed, two with activation energies of 0.54 and 1.04 eV with respect to the conduction band and three with activation energies of 0.2, 0.55 and 0.85 eV relative to the valence band. Crystal structure and composition were determined by x-ray diffraction, EDAX and atomic absorption spectroscopy.
引用
收藏
页码：213 / 217
页数：5
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