DEFECTS, TIGHT-BINDING, AND ABINITIO MOLECULAR-DYNAMICS SIMULATIONS ON A-SI

被引：2
|
作者：
FEDDERS, PA
机构：
[1] Washington University, Department of Physics, St. Louis, MO 63130-4899
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0022-3093(05)80076-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on some recent results of first principles molecular dynamics simulations on a-Si. These simulations yield interesting results that challenge the standard beliefs about what constitutes a defect, how light induced defects arise, and about the origins of conduction band tailing.
引用
收藏
页码：141 / 144
页数：4
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