HIGH-PERFORMANCE FULLY PASSIVATED INALAS INGAAS INP HFET

被引：5
|
作者：
DICKMANN, J [1 ]
HASPEKLO, H [1 ]
GEYER, A [1 ]
DAEMBKES, H [1 ]
NICKEL, H [1 ]
LOSCH, R [1 ]
机构：
[1] DEUTSCH BUNDESPOST TELEKOM,RES CTR,W-6100 DARMSTADT,GERMANY
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 07期
关键词：
SEMICONDUCTOR DEVICES AND MATERIALS; FIELD-EFFECT TRANSISTORS; MICROWAVE DEVICES;
D O I：
10.1049/el:19920409
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of fully Si3N4 passivated lattice matched InAlAs/InGaAs/InP HFETs is reported. The DC IV-characteristics of 0.25-mu-m gate length multigate finger devices show no kink or loop effects indicating excellent material quality. The drain to source breakdown voltage is in excess of V(DB) > 5 V. From the DC device characterisation a maximum saturation current of 490 mA/mm and a maximum transconductance of 500 mS/mm have been measured. A maximum current gain cutoff frequency of f(T) = 100 GHZ and a maximum unilateral gain cutoff frequency as high as f(max) = 280 GHz have been achieved.
引用
收藏
页码：647 / 649
页数：3
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