SPATIAL VARIATION OF ELECTROSTATIC POTENTIAL OF AN ABRUPT ASYMMETRICAL P-N JUNCTION

被引:2
|
作者
FULKERSON, DE
机构
关键词
D O I
10.1109/T-ED.1968.16197
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:404 / +
页数:1
相关论文
共 50 条
  • [1] THE APPARENT CONTACT POTENTIAL OF A PSEUDO-ABRUPT P-N JUNCTION
    KROEMER, H
    [J]. RCA REVIEW, 1956, 17 (04): : 515 - 521
  • [2] Atomically Abrupt Topological p-n Junction
    Kim, Sung Hwan
    Jin, Kyung-Hwan
    Kho, Byung Woo
    Park, Byeong-Gyu
    Liu, Feng
    Kim, Jun Sung
    Yeom, Han Woong
    [J]. ACS NANO, 2017, 11 (10) : 9671 - 9677
  • [3] POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION
    KENNEDY, DP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 988 - 994
  • [4] Simulations of the electrostatic potential in a thin silicon specimen containing a p-n junction
    Somodi, PK
    Dunin-Borkowski, RE
    Twitchett, AC
    Barnes, CHW
    Midgley, PA
    [J]. Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry and Structure, 2005, 839 : 37 - 42
  • [5] Examination of electrostatic potential distribution across an implanted p-n junction by electron holography
    Wang, ZG
    Sasaki, K
    Kato, N
    Urata, K
    Hirayama, T
    Saka, H
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2001, 50 (06): : 479 - 484
  • [6] FREQUENCY-CHARACTERISTICS OF P-N ABRUPT JUNCTION AVALANCHE PHOTODIODES
    KUZNETSOVA, MA
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1988, 33 (08): : 1735 - 1740
  • [7] REVERSE CHARACTERISTICS OF GERMANIUM HYPER-ABRUPT P-N JUNCTION
    TERADA, T
    [J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (01): : 103 - &
  • [8] Electrostatic Analysis of Graphene Nanoribbon p-n Junction Diode
    Shamsir, Samira
    Poly, Laila Parvin
    Subrina, Samia
    [J]. 2015 IEEE INTERNATIONAL WIE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (WIECON-ECE), 2015, : 122 - 125
  • [9] ANALYTICAL EXPRESSIONS FOR ELECTRIC FIELD AND FOR CAPACITANCES OF SYMMETRICAL AND ASYMMETRICAL ABRUPT P-N JUNCTIONS
    NUYTS, W
    VANOVERS.R
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5109 - &
  • [10] AN ANALYSIS OF FREQUENCY DEPENDENCE OF CAPACITANCE OF ABRUPT P-N JUNCTION SEMICONDUCTOR DEVICES
    OHEARN, WF
    CHANG, YF
    [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 473 - &