SCHOTTKY-BARRIER HEIGHT CONTROL BY USING KNOCK-ON EFFECT IN ION-IMPLANTATION

被引：4

作者：

ISHIWARA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,TOKOHAMA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.53

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：53 / 56

页数：4

共 50 条

[1] REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION
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[2] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION
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[3] AN ANALYTIC MODEL FOR BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING LOW-ENERGY ION-IMPLANTATION
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[7] SCHOTTKY CONTACT BARRIER HEIGHT MODIFICATION BY ION-IMPLANTATION OF AL INTO GAAS
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[9] PTSI/N-TYPE SI SCHOTTKY-BARRIER HEIGHT CHANGE BY H+ ION-IMPLANTATION NEAR THE INTERFACE REGION
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[10] LOW-ENERGY HYDROGEN-ION IMPLANTATION IN SCHOTTKY-BARRIER CONTROL
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