IMPROVED CONTACTS TO SEMI-INSULATING GAAS PHOTOCONDUCTIVE SWITCHES USING A GRADED LAYER OF INGAAS

被引：0
|
作者：
KUCHTA, D
WHINNERY, JR
SMITH, JS
WOODALL, JM
PETTIT, D
机构：
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期
关键词：
D O I：
10.1063/1.103344
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
引用
收藏
页码：1534 / 1536
页数：3
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