PREDICTION OF FIELD-TIME-DEPENDENT GATE-OXIDE BREAKDOWN IN MOS DEVICES

被引：2
|
作者：
LI, SP
MESERJIAN, J
机构：
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 11期
关键词：
D O I：
10.1016/0038-1101(79)90066-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：939 / 942
页数：4
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