COMPARISON OF T-0-VALUES OF BULK AND QUANTUM-WELL SEMICONDUCTOR-LASERS

被引：2
|
作者：
HAUG, A [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 23期
关键词：
Semiconducting Gallium Compounds - Semiconductor Devices;
D O I：
10.1049/el:19880985
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
T0-values of bulk and quantum-well lasers should be compared for materials with the same laser wavelength. Theoretical considerations show that the T0-value in the quantum-well case is enhanced by a factor f = 1.5 if the Auger recombination is negligible (as in GaAs), but only by a factor f1.2 if it plays a role (as in GaInAsP).
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页码：1442 / 1443
页数：2
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