ESD - A PERVASIVE RELIABILITY CONCERN FOR IC TECHNOLOGIES

被引:75
|
作者
DUVVURY, C [1 ]
AMERASEKERA, A [1 ]
机构
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DEVICE DESIGN GRP,DALLAS,TX 75265
关键词
D O I
10.1109/5.220901
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrostatic discharge (ESD) is considered a major reliability threat to integrated circuit (IC) technologies. A review of the ESD phenomena along with the test methods, the appropriate on-chip protection techniques, and the impact of process technology advances from CMOS to BiCMOS on the ESD sensitivity of IC protection circuits, are presented. The present status of understanding the ESD failure physics and the current approaches for modeling are also discussed This overview paper deals with several aspects of ESD from the point of view of the test, design, product, and reliability engineers.
引用
收藏
页码:690 / 702
页数:13
相关论文
共 50 条
  • [1] Reliability and radiation effects in IC technologies
    Schrimpf, R. D.
    Warren, K. M.
    Weller, R. A.
    Reed, R. A.
    Massengill, L. W.
    Alles, M. L.
    Fleetwood, D. M.
    Zhou, X. J.
    Tsetseris, L.
    Pantelides, S. T.
    [J]. 2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 97 - 106
  • [2] Reliability Challenges for the Continued Scaling of IC Technologies
    Oates, Anthony S.
    [J]. 2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2012,
  • [3] Sn Whisker Concern in IC Packaging for High Reliability Application
    Chang, Jeffrey
    Lee, Bing
    [J]. 2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009), 2009, : 934 - 938
  • [4] ESD and latch-up reliability for nanometer CMOS technologies
    Duvvury, C
    Boselli, G
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 933 - 936
  • [5] Reliability Evaluations of SiCr Resistors in BCD IC Technologies
    Ring, M.
    Stewart, K. A.
    Jerome, R. C.
    Hasegawa, A.
    Gambino, J. P.
    Price, D. T.
    [J]. 2021 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2021, : 23 - 28
  • [6] CMOS and Interconnect Reliability - ESD, Soft Errors and Backend Reliability Issues for Nanoscale CMOS Technologies
    Banerjee, Kaustav
    Blish, Rich
    [J]. Technical Digest - International Electron Devices Meeting, IEDM, 2004,
  • [7] A survey of device reliability concerns for LV/LP IC technologies
    Galloway, KF
    Schrimpf, RD
    [J]. MICROELECTRONIC ENGINEERING, 1997, 39 (1-4) : 225 - 234
  • [8] Esd hazards in ic handlers
    Peirce, Roger J.
    Williford, Bradley R.
    [J]. EE: Evaluation Engineering, 2009, 48 (12): : 37 - 39
  • [9] Do ESD fails in systems correlate with IC ESD robustness?
    Stadler, Wolfgang
    Brodbeck, Tilo
    Gaertner, Reinhold
    Gossner, Harald
    [J]. MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 1079 - 1085
  • [10] Simple ESD gun tests IC
    Tiwari, SS
    [J]. EDN, 1996, 41 (19) : 183 - 183