12 GHZ LOW-NOISE MMIC AMPLIFIER DESIGNED WITH A NOISE MODEL THAT SCALES WITH MODFET SIZE AND BIAS

被引：14
|
作者：
HUGHES, B
PERDOMO, J
KONDOH, H
机构：
[1] Hewlett Packard Microwave Technology Division, Santa Rosa, CA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 12期
关键词：
D O I：
10.1109/22.260722
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A scalable, bias-dependent FET noise model was developed for MMIC design. A three-stage, 12 GHz, MMIC, low-noise amplifier (LNA) was designed with the model. The LNA has a 1.6 dB noise figure and 25.6 dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm2) than previous MMIC LNA's.
引用
收藏
页码：2311 / 2316
页数：6
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